Abstract

ZnO:In thin films was deposited on glass substrate by magnetron DC sputtering method from ceramic target. The ZnO:In ceramic targets have concentrations of In2O3 varying between 1 and 4wt%. The ZnO:In film has the resistivity with value of 1.79 x 10-3 Ωcm, at a layer thickness of about 1μm, corresponding with ZnO:In target (2%wt In2O3), at the substrate temperature of about 240- 0C. All ZnO:In thin films have the transparence above 85% in the visible spectra.