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DETERMINING THE CRYSTALLIZATION BEHAVIOR OF TiO2-SiO2 MIXED COMPOSITION FILMS

Le Vu Tuan Hung 1
Nguyen Van Den 1
Huynh Thanh Dat 1
Ta Thi Kieu Hanh 1
Volume & Issue: Vol. 9 No. 1 (2006) | Page No.: 17-24 | DOI: 10.32508/stdj.v9i1.2870
Published: 2006-01-31

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Copyright The Author(s) 2023. This article is published with open access by Vietnam National University, Ho Chi Minh city, Vietnam. This article is distributed under the terms of the Creative Commons Attribution License (CC-BY 4.0) which permits any use, distribution, and reproduction in any medium, provided the original author(s) and the source are credited. 

Abstract

Studying the structure of TiO2-SiO2 composition thin films is very important because the crystallization behavior and their surface roughness Rms depend very much on their composition as well as annealing. Annealing composition thin film in a high temperature such as 600°C causes changing in their structures from amorphous to anatase and rutile structures. Because of an inhomogeneous in the TiO2-SiO2 composition structures, this changing can cause damage thin films. In this report, the changes of their structure were studied by Atomic Force Microscope AFM and X-ray diffraction. Furthermore, the crystallization behavior of films depending on the high temperature 600°C in 3h was also determined.

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