Abstract

Transparent conducting Gallium-doped Zinc oxide thin films were prepared by rf magnetron sputtering using ceramic oxide target made from the mixture of Ga2O3 (99.99%) – ZnO (99.5%) powders pressed at 1400kg/cm2 and sintered at 1500 ℃. The obtained thin films have the optical transmission of 85% on average in the wavelength range of 400 to 700 nm and the resistivity of 4 -5 x 10-4 Ω.cm. The films have a high texture and grow only along the c axis (002 plane) of the hexagonal structure.