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INVESTIGATING INFLUENCE OF THE SUBSTRATE TEMPERATURE ON STRUCTURE OF ZnO:AI FILMS PREPARED BY MAGNETRON SPUTTERING METHOD

Nguyen Kim Hong Phuc 1
Tran Tuan 2
Le Van Hieu 2
Phan Bach Thang 2
Volume & Issue: Vol. 7 No. 2 (2004) | Page No.: 13-16 | DOI: 10.32508/stdj.v7i2.3156
Published: 2004-02-29

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This article is published with open access by Viet Nam National University, Ho Chi Minh City, Viet Nam. This article is distributed under the terms of the Creative Commons Attribution License (CC-BY 4.0) which permits any use, distribution, and reproduction in any medium, provided the original author(s) and the source are credited.

Abstract

This work investigated the theory of negative ion radiation on ZnO and ZnO:Al target. Found that, negative ions Oxygen are generated from target surface due to surface ionization. Calculating result is nearly equal to experiment. Besides, this work also study the influences of high enegetic negative ion resputtering on electrical and optical properties of transparent conductive films ZnO:Al following different positions on substrate. As a result, located outside plasma edge, films have high resistivity and transmittance. Especially, film is set in perpenticularity to target, whose resistivity gets 5.1042.cm

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