Abstract

The purpose of this investigation is to prepare Al2O3 doped (1 = 3 wt.%) ZnO sintered ceramic targets and then study influence of Al doping content and substrate temperature on the electrical and optical properties of ZnO films deposited by unbalanced dc magnetron sputtering method from ceramic targets. ZnO:Al thin films were deposited from these ceramic targets sintered at 1320°C, along to deposition parameters as sputtering pressure p = 10 torr; discharge current I = 100 mA, substrate to target distance h = 4,5 cm and substrate temperature T, = 250°C. The results shows the ZnO:Al thin films have the lowest resistivity of 9.104 cm, the transmittance of 87% when the ceramic targets (2%wt) was used.