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Abstract
Binding energy of Wannier exciton in GaAs / GaAlAs quantuin Well is calculated using a variational approach. Our numerical results show that the decreasing of the exciton binding energy along with increasing of the well's width that takes into account the polaron effect is lower than that without the polaron effect.
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Article Details
Issue: Vol 3 No 9&10 (2000)
Page No.: 85-91
Published: Oct 31, 2000
Section: Article
DOI: https://doi.org/10.32508/stdj.v3i9&10.3601
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Copyright: The Authors. This is an open access article distributed under the terms of the Creative Commons Attribution License CC-BY 4.0., which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
How to Cite
Nhu Huy, N. (2000). EXCITON BINDING ENERGY IN SEMICONDUCTOR QUANTUM WELLS INCLUDING CONTRIBUTIONS OF THE POLARON EFFECT AND THE EXTERNAL ELECTRIC FIELD. VNUHCM Journal of Science and Technology Development, 3(9&10), 85-91. https://doi.org/https://doi.org/10.32508/stdj.v3i9&10.3601
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