Abstract

(ZnO:Al)/p-Si heterojunction solar cells was fabricated on p-Si substrates by DC magnetron sputtering from (ZnO:Al) ceramic targets. For 1 μm thick (ZnO:Al) films deposited at 160°C in 10-3 torr of Argon, the electrical resistivity was 4,5.10-4 .cm and the average optical transmittance was 86 - 87% in the visible range. The ohmic contacts were formed between p-Si and Al for a bottom electrode. Under the light of solar at 12 pm, the best fabricated cells show an open-circuit voltage of 513 mV, a short-circuit current of 37.5 mA/cm2, a fill factor of 0,4 and a conversion efficiency of 8%. No degradation of the cell efficiency was observed during 24 hour illumination test and after storing the cell in air for seven month.