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VNUHCM Journal of

Science and Technology Development

An official journal of Viet Nam National University Ho Chi Minh City, Viet Nam since 1997

ISSN: 1859-0128
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Natural Sciences - Research article Open Access Logo

Simulation of current-voltage characteristics of graphene field effect transistor (GFET)

Hien Sy Dinh 1, *

  1. University of Science, VNU-HCM
Correspondence to: Hien Sy Dinh, University of Science, VNU-HCM. Email: pvphuc@vnuhcm.edu.vn.
Volume & Issue: Vol. 16 No. 3 (2013) | Page No.: 5-12 | DOI: 10.32508/stdj.v16i3.1633
Published: 2013-09-30

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Copyright © 2013 by the author(s).

Copyright The Author(s) 2023. This article is published with open access by Vietnam National University, Ho Chi Minh city, Vietnam. This article is distributed under the terms of the Creative Commons Attribution License (CC-BY 4.0) which permits any use, distribution, and reproduction in any medium, provided the original author(s) and the source are credited. 

Abstract

Graphene has been one of the most vigorously studied research materials. We have developed a program for simulation of graphene field effect transistor (GFET). In this work, we use the simulation program to explore the performance of graphene FET. The simple model of the graphene FET is based on non-equilibrium Green’s function method and first is implemented by using graphic user interface of Matlab. The current-voltage characteristics of the GFET and affects of channel materials, gate materials, size of graphene FET, temperature on the characteristics are explored.

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