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VNUHCM Journal of

Science and Technology Development

An official journal of Viet Nam National University Ho Chi Minh City, Viet Nam since 1997

ISSN: 1859-0128
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SIMULATION OF CURRENT-VOLTAGE CHARACTERISTICS OF SPIN FIELD EFFECT TRANSISTOR USING NEMO-VN2

Hien Sy Dinh 1, *

  1. University of Science, VNU-HCM
Correspondence to: Hien Sy Dinh, University of Science, VNU-HCM. Email: pvphuc@hcmuns.edu.vn.
Volume & Issue: Vol. 15 No. 3 (2012) | Page No.: 5-16 | DOI: 10.32508/stdj.v15i3.1812
Published: 2012-09-30

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Copyright © 2012 by the author(s).

Copyright The Author(s) 2023. This article is published with open access by Vietnam National University, Ho Chi Minh city, Vietnam. This article is distributed under the terms of the Creative Commons Attribution License (CC-BY 4.0) which permits any use, distribution, and reproduction in any medium, provided the original author(s) and the source are credited. 

Abstract

We have developed a simulator for nanoelectronics devices, NEMO-VN2. In this work, we provide an overview of spin field effect transistor. We use the simulator to explore the performance of spin FET. The model of the spin FET is based on non-equilibrium Green function method and implemented by using graphic user interface of Matlab. The current-voltage characteristics such as drain current-voltage, drain current-gate voltage ones are explored.

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