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Abstract
We have developed a simulator for nanoelectronics devices, NEMO-VN2. In this work, we provide an overview of spin field effect transistor. We use the simulator to explore the performance of spin FET. The model of the spin FET is based on non-equilibrium Green function method and implemented by using graphic user interface of Matlab. The current-voltage characteristics such as drain current-voltage, drain current-gate voltage ones are explored.
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Article Details
Issue: Vol 15 No 3 (2012)
Page No.: 5-16
Published: Sep 30, 2012
Section: Natural Sciences - Research article
DOI: https://doi.org/10.32508/stdj.v15i3.1812
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Copyright: The Authors. This is an open access article distributed under the terms of the Creative Commons Attribution License CC-BY 4.0., which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
How to Cite
Dinh, H. (2012). SIMULATION OF CURRENT-VOLTAGE CHARACTERISTICS OF SPIN FIELD EFFECT TRANSISTOR USING NEMO-VN2. VNUHCM Journal of Science and Technology Development, 15(3), 5-16. https://doi.org/https://doi.org/10.32508/stdj.v15i3.1812
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