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Abstract

We have developed a simulator for nanoelectronics devices, NEMO-VN2. In this work we use the simulator to explore the performance of single electron transistor. The model is base on non-equilibrium Green function method and implemented by using graphic user interface of Matlab. The current-voltage characteristics such as drain current-voltage, drain current-gate voltage ones are explored. Some characteristics reproduced by the proposed model are compared with experimental results of single electron transistor and good agreements are validated.

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Issue: Vol 15 No 3 (2012)
Page No.: 15-25
Published: Sep 30, 2012
Section: Natural Sciences - Research article
DOI: https://doi.org/10.32508/stdj.v15i3.1843

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Creative Commons License

Copyright: The Authors. This is an open access article distributed under the terms of the Creative Commons Attribution License CC-BY 4.0., which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

 How to Cite
Dinh, H. (2012). SIMULATION OF CURRENT-VOLTAGE CHARACTERISTICS OF SINGLE ELECTRON TRANSISTOR USING NEMO-VN2. Science and Technology Development Journal, 15(3), 15-25. https://doi.org/https://doi.org/10.32508/stdj.v15i3.1843


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