Open Access  

Downloads

Download data is not yet available.

Abstract

We have developed a simulator for nanoelectronics devices, NEMO-VN2. In this work we use the simulator to explore the performance of single electron transistor. The model is base on non-equilibrium Green function method and implemented by using graphic user interface of Matlab. The current-voltage characteristics such as drain current-voltage, drain current-gate voltage ones are explored. Some characteristics reproduced by the proposed model are compared with experimental results of single electron transistor and good agreements are validated.

Author's Affiliation
Article Details

Issue: Vol 15 No 3 (2012)
Page No.: 15-25
Published: Sep 30, 2012
Section: Natural Sciences - Research article
DOI: https://doi.org/10.32508/stdj.v15i3.1843

 Copyright Info

Creative Commons License

Copyright: The Authors. This is an open access article distributed under the terms of the Creative Commons Attribution License CC-BY 4.0., which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

 How to Cite
Dinh, H. (2012). SIMULATION OF CURRENT-VOLTAGE CHARACTERISTICS OF SINGLE ELECTRON TRANSISTOR USING NEMO-VN2. Science and Technology Development Journal, 15(3), 15-25. https://doi.org/https://doi.org/10.32508/stdj.v15i3.1843


 Download Citation
 Cited by

Article level Metrics by Paperbuzz/Impactstory
Article level Metrics by Altmetrics

 Article Statistics
HTML = 1085 times
Download PDF   = 547 times
Total   = 547 times