SIMULATING CHARACTERISTICS OF CARBON NANOTUBE FIELD- EFFECT TRANSISTOR (CNTFET)

Abstract

We provide a model of coaxial CNTFET, using single wall nanotube. These devices would exhibit wrap-around gates that maximize capacitive coupling between the gate electrode and the nanotube channel. The results of simulations of I-V characteristics for CNTFETs are presented. Here we use non-equilibrium Green’s function (NEGF) to perform simulation for CNTFET. This simulator also includes a graphic user interface (GUI) of Matlab that enables parameter entry, calculation control, display of calculation results. In this work, we review the capabilities of the simulator, summarize the theoretical approach and experimental results. Current-voltage characteristics are a function of the variables such as: diameter of CNT, the length of CNT, the gate oxide thickness, gate voltage of Vg, types of materials of Source-Drain, Gate, and temperature. The obtained I-V characteristics of the CNTFET are also presented by analytical equations.