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SIMULATING CURRENT - VOLTAGE CHARACTERISTICS OF MOLECULAR TRANSISTOR FIELD EFFECT TRANSISTOR

Hien Sy Dinh 1, *
Trung Hoang Huynh 1
  1. University of Sciences, VNU-HCM
Correspondence to: Hien Sy Dinh, University of Sciences, VNU-HCM. Email: pvphuc@hcmuns.edu.vn.
Volume & Issue: Vol. 12 No. 13 (2009) | Page No.: 5-12 | DOI: 10.32508/stdj.v12i13.2389
Published: 2009-07-15

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Copyright The Author(s) 2023. This article is published with open access by Vietnam National University, Ho Chi Minh city, Vietnam. This article is distributed under the terms of the Creative Commons Attribution License (CC-BY 4.0) which permits any use, distribution, and reproduction in any medium, provided the original author(s) and the source are credited. 

Abstract

Molecular Field Effect Transistor (MFET) is a promising alternative candidate of traditional MOSFET in future due to its small size, low power consumption and high speed. In this work, we introduce a model of three-terminal MFET. The structure of the MFET is in shape like traditional MOSFET, but its conductive channel is replaced by a benzene-1,4-dithiolate molecule. We use non-equilibrium Green's function method to compute transport function of charges and ultimately, the current-voltage (1-V) characteristics. The program is written by using graphic user guide (GUI) in Matlab. We have found significant difference of I-V characteristics between MOSFET and MFET. In addition, impacts of types of material, temperature, and bias on I-V characteristics of the MFET have been considered. Using GUI in Matlab, obtained results of simulations are intuitively displayed.

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