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Abstract

Molecular Field Effect Transistor (MFET) is a promising alternative candidate of traditional MOSFET in future due to its small size, low power consumption and high speed. In this work, we introduce a model of three-terminal MFET. The structure of the MFET is in shape like traditional MOSFET, but its conductive channel is replaced by a benzene-1,4-dithiolate molecule. We use non-equilibrium Green's function method to compute transport function of charges and ultimately, the current-voltage (1-V) characteristics. The program is written by using graphic user guide (GUI) in Matlab. We have found significant difference of I-V characteristics between MOSFET and MFET. In addition, impacts of types of material, temperature, and bias on I-V characteristics of the MFET have been considered. Using GUI in Matlab, obtained results of simulations are intuitively displayed.



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Article Details

Issue: Vol 12 No 13 (2009)
Page No.: 5-12
Published: Jul 15, 2009
Section: Article
DOI: https://doi.org/10.32508/stdj.v12i13.2389

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Creative Commons License

Copyright: The Authors. This is an open access article distributed under the terms of the Creative Commons Attribution License CC-BY 4.0., which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

 How to Cite
Dinh, H., & Huynh, T. (2009). SIMULATING CURRENT - VOLTAGE CHARACTERISTICS OF MOLECULAR TRANSISTOR FIELD EFFECT TRANSISTOR. Science and Technology Development Journal, 12(13), 5-12. https://doi.org/https://doi.org/10.32508/stdj.v12i13.2389

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