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Abstract
Studying the structure of TiO2-SiO2 composition thin films is very important because the crystallization behavior and their surface roughness Rms depend very much on their composition as well as annealing. Annealing composition thin film in a high temperature such as 600°C causes changing in their structures from amorphous to anatase and rutile structures. Because of an inhomogeneous in the TiO2-SiO2 composition structures, this changing can cause damaging thin films. In this report, their crystallization was studied by Atomic Force Microscope AFM and X-ray diffraction. Furthermore, the crystallization behavior of films depending on the high temperature 600°C in 3h was also determined.
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Article Details
Issue: Vol 9 No 4 (2006)
Page No.: 24-30
Published: Apr 30, 2006
Section: Article
DOI: https://doi.org/10.32508/stdj.v9i4.2897
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Copyright: The Authors. This is an open access article distributed under the terms of the Creative Commons Attribution License CC-BY 4.0., which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
How to Cite
Tuan Hung, L., Thanh Dat, H., Van Den, N., & Kieu Hanh, T. (2006). DETERMINING THE CRYSTALLIZATION BEHAVIOR OF TiO2-SiO2 MIXED COMPOSITION FILMS. Science and Technology Development Journal, 9(4), 24-30. https://doi.org/https://doi.org/10.32508/stdj.v9i4.2897
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