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Abstract

(ZnO:Al)/p-Si heterojunction solar cells was fabricated on p-Si substrates by DC magnetron sputtering from (ZnO:Al) ceramic targets. For 1 μm thick (ZnO:Al) films deposited at 160°C in 10-3 torr of Argon, the electrical resistivity was 4,5.10-4 .cm and the average optical transmittance was 86 - 87% in the visible range. The ohmic contacts were formed between p-Si and Al for a bottom electrode. Under the light of solar at 12 pm, the best fabricated cells show an open-circuit voltage of 513 mV, a short-circuit current of 37.5 mA/cm2, a fill factor of 0,4 and a conversion efficiency of 8%. No degradation of the cell efficiency was observed during 24 hour illumination test and after storing the cell in air for seven month.



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Issue: Vol 8 No 6 (2005)
Page No.: 5-10
Published: Jun 30, 2005
Section: Article
DOI: https://doi.org/10.32508/stdj.v8i6.3001

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Creative Commons License

Copyright: The Authors. This is an open access article distributed under the terms of the Creative Commons Attribution License CC-BY 4.0., which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

 How to Cite
Hanh Thu, V., Huu Chi, N., & Cong Truong, D. (2005). APPLICATION OF DC MAGNETRON SPUTTERING FOR ZnO:Al/p-Si HETEROJUNCTION SOLAR CELLS. Science and Technology Development Journal, 8(6), 5-10. https://doi.org/https://doi.org/10.32508/stdj.v8i6.3001

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