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THE TRANSPARENT DIELECTRIC THIN FILM WITH ADJUSTED REFRACTION INDEX FROM 1,4 TO 1,95

Tran Quang Trung 1
Le Khac Binh 1
Truong Quang Nghia 1
Volume & Issue: Vol. 7 No. 7 (2004) | Page No.: 17-22 | DOI: 10.32508/stdj.v7i7.3226
Published: 2004-07-31

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Copyright The Author(s) 2023. This article is published with open access by Vietnam National University, Ho Chi Minh city, Vietnam. This article is distributed under the terms of the Creative Commons Attribution License (CC-BY 4.0) which permits any use, distribution, and reproduction in any medium, provided the original author(s) and the source are credited. 

Abstract

By Sol-gel method the TiOSi compound thin films is deposited on glass substrate from solution with two alkoxide components Tetraethylorthosilicate Si(OC2H3)4 and Tetra-n propylorthotitanate Ti(OC3H7)4. Some properties of thin films are determined by transmission spectrum, X ray diffraction, ATR and Raman spectroscopy. The datum are calculated by SCOUT software. Results show that with the TioSi thin films, there is a linear dependence of refractive index (from 1.43 to 1.95) on percentage concentration ratio of two alkoxides in the prepared process.

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