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Abstract
By Sol-gel method the TiOSi compound thin films is deposited on glass substrate from solution with two alkoxide components Tetraethylorthosilicate Si(OC2H3)4 and Tetra-n propylorthotitanate Ti(OC3H7)4. Some properties of thin films are determined by transmission spectrum, X ray diffraction, ATR and Raman spectroscopy. The datum are calculated by SCOUT software. Results show that with the TioSi thin films, there is a linear dependence of refractive index (from 1.43 to 1.95) on percentage concentration ratio of two alkoxides in the prepared process.
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Article Details
Issue: Vol 7 No 7 (2004)
Page No.: 17-22
Published: Jul 31, 2004
Section: Article
DOI: https://doi.org/10.32508/stdj.v7i7.3226
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Copyright: The Authors. This is an open access article distributed under the terms of the Creative Commons Attribution License CC-BY 4.0., which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
How to Cite
Quang Trung, T., Khac Binh, L., & Quang Nghia, T. (2004). THE TRANSPARENT DIELECTRIC THIN FILM WITH ADJUSTED REFRACTION INDEX FROM 1,4 TO 1,95. Science and Technology Development Journal, 7(7), 17-22. https://doi.org/https://doi.org/10.32508/stdj.v7i7.3226
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