EXCITON BINDING ENERGY IN SEMICONDUCTOR QUANTUM WELLS INCLUDING CONTRIBUTIONS OF THE POLARON EFFECT AND THE EXTERNAL ELECTRIC FIELD

Abstract

Binding energy of Wannier exciton in GaAs / GaAlAs quantuin Well is calculated using a variational approach. Our numerical results show that the decreasing of the exciton binding energy along with increasing of the well's width that takes into account the polaron effect is lower than that without the polaron effect.