Thermoelectric properties of eco-friendly synthesized Ga-doped ZnO material
- Advanced Materials Technology Institute Vietnam National University Ho Chi Minh City (formerly affiliated with Center for Innovative Materials and Architectures), Ho Chi Minh City, Vietnam
- Laboratory of Advanced Materials, University of Science, Ho Chi Minh City, Vietnam
- Laboratory of Advanced Materials - University of Science, VNU-HCM
Abstract
In this study, we synthesized GaxZn1-xO (x = 0, 0.01, and 0.02) nanoparticles via a simple, low-cost, and environmentally friendly method using orange peel extract as a stabilizing agent. The crystal structure and thermoelectric properties of the samples were investigated. The results indicated that gallium (Ga) doping positively influenced the crystal structure, enhancing the temperature-dependent electrical conductivity of ZnO. Specifically, the Ga-doped ZnO sample with 2 at.% Ga (GZO-2) exhibited an electrical conductivity of approximately 64.3 S/cm at 1068 K, which is over 29 times higher than that of undoped ZnO. Furthermore, the power factor of this sample reached approximately 56 uW/mK2 at 1068 K, representing an increase of over 193%. These findings demonstrate the potential of Ga doping for enhancing the thermoelectric performance of ZnO through microstructural modifications in the crystal lattice.