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Abstract
We consider the mobility of a quasi-twodimensional electron gas in a GaP/AlP/GaP quantum well with a valley degeneracy g 1 for quantum well width L < Lc = 45.7 Å and a valley degeneracy of g 2 for quantum well width L > Lc = 45.7 Å. We calculate the mobility as a function of electron density for interface-roughness and impurity scattering with using different approximations for the local-field correction. In the case of zero temperature and Hubbard local-field correction our results reduce to those of [16]. We also study the dependence of resistivity on temperature and parallel magnetic field. The Seebeck coefficient as a function of electron concentration and quantum well width are also calculated.
Issue: Vol 18 No 3 (2015)
Page No.: 85-92
Published: Aug 30, 2015
Section: Natural Sciences - Research article
DOI: https://doi.org/10.32508/stdj.v18i3.824
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