Downloads
Abstract
Transparent conducting zinc oxide thin films having high electron-mobility are deposited on glass substrates by DC magnetron sputtering in gas mixture of argon and hydrogen at room temperature. Introducing a little amount of hydrogen gas into sputtering Ar gas can remarkedly improve the electron mobility in ZnO thin films. With gas flow rate ratios of hydrogen to argon range from 7.2 % to 19.2 %, ZnO films with hydrogen (ZnO:H) have stable and low resistivity of 6.6×10-4 Ω.cm. At H2/Ar flow rate ratio 7.2 %, electron Hall mobility in ZnO:H film reaches a maximum value of 61 cm2.V-1.s-1. This value is much higher than the one of 23 cm2.V-1.s-1 in pure ZnO films under the same deposition condition. Morever, electron density of 1.51020 cm-3 in ZnO:H films is also higher than the one of 6×1019 cm-3 in pure ZnO films. XRD and FESEM show that the average crystallinegrain size in ZnO:H films are larger than the one in pure ZnO films. The 600-nm-thick ZnO:H films (substrate included) have average transmission of 83 % in the wide wavelength range of 380-1100 nm and low sheet resistance of 11 /square.
Issue: Vol 18 No 3 (2015)
Page No.: 162-169
Published: Aug 30, 2015
Section: Natural Sciences - Research article
DOI: https://doi.org/10.32508/stdj.v18i3.832
Download PDF = 1597 times
Total = 1597 times
Most read articles by the same author(s)
- Linh Ba Ngoc Nguyen, Dung Van Hoang, Van Thi Thanh Tran, Investigating the effect of yttria contents on the structure and mechanical properties of zirconia ceramics , Science and Technology Development Journal: Vol 19 No 4 (2016)