Influence of annealing temperature on reversible resistive switching of WOx thin filmsdeposited on FTO substrate

Abstract

In this work, we investigated effects of the annealing temperature on the crystalline, morphology of sputtered WO_x thin films. The resutls show that as-deposited WO_x thin films and annealed WO_xthin films at 300^oC, 600^oC in the air are in monoclinic phase. As the annealing temperature increases, crystallinity of WO_x thin films enhances with high(200) orientation. FESEM images showed larger grain size, and denser films at high annealing temperatures. The reversible resistance switching characteristics of the Ag/WO_x/FTO structure follows bipolar type, the switching ratio decreases as the crystallinity of WO_x thin films increases under an the annealing treatment.