Abstract

Transparent conducting ZnO films are prepared on glass substrates by reactive de magnetron sputtering from metallic target Zn in an Ar – O2 mixture gases. During deposition, the sputtering power was controlled at P = 120W, the total pressure was maintained at p = 2.10-3 torr, the deposition time t = 90 minutes. The substrate was not intentionally heated and no bias was applied. Transmission T%, band gap Eg, refraction index n and extinction coefficient k can be obtained from Swanepoel method. The structure properties of ZnO films were determined from XRD and the films resistivity was measured by a four – point probe method. When the gas ratio of O2/Ar is 1%, the best films resistivity is 1.3x10-3 cm and the average transmission of the films is 86% in the wavelength range of the visible spectrum. The c-axis of all films is highly oriented perpendicular to the plane of substrate.