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Abstract

Introduction: ZnO is a potential semiconductor material for thermoelectric (TE) applications at high temperature. In this study, doping Bi atoms aims to improve the power factor of ZnO ceramic. Based on the analyses of structural and TE properties, the enhancement in Seebeck coefficient proves the benefit of Bi doping.


Methods: The ZnO and Bi-doped ZnO (BZO) ceramics were fabricated by solid-state reaction at 1400oC in air. The Seebeck LSR-3 system measured both samples’ TE properties, with a combined Hall effect at room temperature. The crystalline structure was analyzed through the X-ray diffraction (XRD) technique.


Results: The XRD patterns show all samples having polycrystalline hexagonal wurtzite structure. Although the crystallinity is enhanced, Bi doping reduces significantly carrier concentration from 3.4×1019 to 1.1×1019 cm-3 at room temperature. As a result at 500oC, the electrical conductivity, Seebeck coefficient, and power factor are 126 Scm-1, -99 µVK-1, and 124 µWm-1K-2 for pure ZnO; and 76 Scm-1, -142 µVK-1, and 165 µWm-1K-2 for BZO ceramic, respectively.


Conclusion: The power factor of Bi-doped ZnO is improved by 32% as compared to pure ZnO at 500oC. The raise of Seebeck coefficient is the main reason for the growth of power factor.



Author's Affiliation
  • Thang Minh Bui

    Google Scholar Pubmed

  • Dai Cao Truong

    Google Scholar Pubmed

  • Phung Y Nguyen

    Google Scholar Pubmed

  • Anh Tuan Thanh Pham

    Email I'd for correspondance: pttanh@hcmus.edu.vn
    Google Scholar Pubmed

  • Dung Van Hoang

    Google Scholar Pubmed

  • Truong Huu Nguyen

    Google Scholar Pubmed

  • Vinh Cao Tran

    Google Scholar Pubmed

  • Thang Bach Phan

    Google Scholar Pubmed

Article Details

Issue: Vol 25 No 3 (2022)
Page No.: 2489-2496
Published: Oct 15, 2022
Section: NATURAL SCIENCES
DOI: https://doi.org/10.32508/stdj.v25i3.3935

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Creative Commons License

Copyright: The Authors. This is an open access article distributed under the terms of the Creative Commons Attribution License CC-BY 4.0., which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

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 How to Cite
Bui, T., Truong, D., Nguyen, P., Pham, A., Hoang, D., Nguyen, T., Tran, V., & Phan, T. (2022). Structural, electrical and thermoelectric characterizations of bismuth-doped ZnO ceramic material. VNUHCM Journal of Science and Technology Development, 25(3), 2489-2496. https://doi.org/https://doi.org/10.32508/stdj.v25i3.3935

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