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Abstract

In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.



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Article Details

Issue: Vol 19 No 2 (2016)
Page No.: 92-100
Published: Jun 30, 2016
Section: Natural Sciences - Research article
DOI: https://doi.org/10.32508/stdj.v19i2.794

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Creative Commons License

Copyright: The Authors. This is an open access article distributed under the terms of the Creative Commons Attribution License CC-BY 4.0., which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

 How to Cite
Pham, N., Phan, T., & Tran, V. (2016). Effects of the thickness on resistive switching characteristics of CrOx thin films. Science and Technology Development Journal, 19(2), 92-100. https://doi.org/https://doi.org/10.32508/stdj.v19i2.794

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