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Abstract

Sb-doped ZnO thin films with different values of Sb concentrations are deposited on glass substrate by using spin-coating technique. The influences of Sb doping content on the microstructural, photoluminescence and Raman properties of ZnO film are systematically investigated by X-ray diffraction (XRD), transmission spectrum, photoluminescence (PL) spectrum and Raman scattering spectrum. The results indicate that ZnO thin film doped with Sb exhibits a hexagonal wurtzite structure with preferred c-axis orientation. The strong violet emission peak located at 3.11 eV is observed in the Sb-doped ZnO thin film by photoluminescence. Conbining the Raman scattering spectrum with photoluminescence, it is concluded that the strong violet emission peak related to SbZn-O complex defect in ZnO:Sb film.



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Issue: Vol 18 No 3 (2015)
Page No.: 78-84
Published: Aug 30, 2015
Section: Natural Sciences - Research article
DOI: https://doi.org/10.32508/stdj.v18i3.823

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Copyright: The Authors. This is an open access article distributed under the terms of the Creative Commons Attribution License CC-BY 4.0., which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

 How to Cite
Dao, T., Nguyen, Q., Vuong, L., & Le, H. (2015). Study on influences of Sb doping content on the defects of ZnO film by photoluminescence (PL) spectrum and raman scattering spectrum. Science and Technology Development Journal, 18(3), 78-84. https://doi.org/https://doi.org/10.32508/stdj.v18i3.823

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