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Study on influences of Sb doping content on the defects of ZnO film by photoluminescence (PL) spectrum and raman scattering spectrum

Tuan Anh Dao 1, *
Quang Nhat Nguyen 1
Loan Nguyen Phuong Vuong 1
Hung Vu Tuan Le 1
  1. VNUHCM-University of Science
Correspondence to: Tuan Anh Dao, VNUHCM-University of Science. Email: pvphuc@vnuhcm.edu.vn.
Volume & Issue: Vol. 18 No. 3 (2015) | Page No.: 78-84 | DOI: 10.32508/stdj.v18i3.823
Published: 2015-08-30

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Copyright The Author(s) 2023. This article is published with open access by Vietnam National University, Ho Chi Minh city, Vietnam. This article is distributed under the terms of the Creative Commons Attribution License (CC-BY 4.0) which permits any use, distribution, and reproduction in any medium, provided the original author(s) and the source are credited. 

Abstract

Sb-doped ZnO thin films with different values of Sb concentrations are deposited on glass substrate by using spin-coating technique. The influences of Sb doping content on the microstructural, photoluminescence and Raman properties of ZnO film are systematically investigated by X-ray diffraction (XRD), transmission spectrum, photoluminescence (PL) spectrum and Raman scattering spectrum. The results indicate that ZnO thin film doped with Sb exhibits a hexagonal wurtzite structure with preferred c-axis orientation. The strong violet emission peak located at 3.11 eV is observed in the Sb-doped ZnO thin film by photoluminescence. Conbining the Raman scattering spectrum with photoluminescence, it is concluded that the strong violet emission peak related to SbZn-O complex defect in ZnO:Sb film.

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