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Abstract
The transparent conductive thin films ZnO-Ga are rf magnetron sputtered from ZnO target doped 4.4% of Ga at a power of 200W. These films have resistivity as low as 4.6 x 10-4 cm and the optical transmittance of 85% (at 550nm). At room temperature, these films have good structure properties with very high orientation of (002) plane. The conductive properties were less affected by the bombardment of high energetic negative ions due to low surface ionization of the target. In addition, these films have high heat resistance in the atmospheric air due to high solubility of Ga in ZnO lattice.
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Article Details
Issue: Vol 10 No 3 (2007)
Page No.: 37-41
Published: Mar 31, 2007
Section: Article
DOI: https://doi.org/10.32508/stdj.v10i3.2761
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Copyright: The Authors. This is an open access article distributed under the terms of the Creative Commons Attribution License CC-BY 4.0., which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
How to Cite
My Dung, C., Vinh, T., & Chi, N. (2007). THE INFLUENCE OF DOPING Ga ATOM ON CONDUCTIVE PROPERTIES OF ZnO THIN FILM MADE BY MAGNETRON SPUTTERING. Science and Technology Development Journal, 10(3), 37-41. https://doi.org/https://doi.org/10.32508/stdj.v10i3.2761
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