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Abstract
The transparent conducting ZnO: Al thin films were synthesised by sol-gel method using zinc acetate dihydrate (Zn(CH3COO)2.2H2O), Al(NO3)3.9H2O, 2-methoxyethanol and MEA (monoethanolamine) as precursor, dopant agent, solvent and stabilizer, respectively. XRD patterns showed polycrystalline wurtzite structure of ZnO: Al films annealed at 500°C in air. The conductivity depends on environment annealling conditions, ie the conductivity increases 108 times by vacuum annealing (10-3Torr). The minimum resistivity was Rsmin=37222 at 2% aluminum dopant. The transmittance of undoped and doped films were higher than 85%. Uniformity films were evaluated by SEM.
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Article Details
Issue: Vol 10 No 10 (2007)
Page No.: 32-38
Published: Oct 31, 2007
Section: Article
DOI: https://doi.org/10.32508/stdj.v10i10.2832
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Copyright: The Authors. This is an open access article distributed under the terms of the Creative Commons Attribution License CC-BY 4.0., which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
How to Cite
Viet, N., Trung, T., Binh, L., & Chien, D. (2007). THE OPTICAL AND ELECTRICAL CHARACTERISTICS OF ZnO: Al THIN FILMS PREPARED BY SOL-GEL METHOD. Science and Technology Development Journal, 10(10), 32-38. https://doi.org/https://doi.org/10.32508/stdj.v10i10.2832
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