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Abstract
TiO2 film were deposited on glass by a DC "Sputter Managtron -Ion Plating" (SMIP). The influence of total pressure, oxygen mole fraction , discharge current on the structural properties were studied. By lowering the total pressure10-3torr) ; oxygen mole fraction (20%) and raising the diacharge current (0.6A0.7A), we found that the anatase - rutile phase can be obtained at low substrate temperature. Optical properties of these film were the refractive index n550 = 2.52.52;the extinction coefficent k ≈ 10-3cm-1 ; the absorption edge 0=350nm.
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Article Details
Issue: Vol 2 No 8 (1999)
Page No.: 30-36
Published: Aug 31, 1999
Section: Article
DOI: https://doi.org/10.32508/stdj.v2i8.3668
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Copyright: The Authors. This is an open access article distributed under the terms of the Creative Commons Attribution License CC-BY 4.0., which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
How to Cite
Kim Chung, V., Minh Duy, T., & Huu Chi, N. (1999). PREPARATION OF THIN FILM TIO, BY SPUTTER-ION-PLATING. Science and Technology Development Journal, 2(8), 30-36. https://doi.org/https://doi.org/10.32508/stdj.v2i8.3668
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