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Undoped ZnO, Ga-doped ZnO, Ga and In dually doped-ZnO thin films were deposited by using magnetron Dc technique. Results from XRD, EDX and FESEM confirm influences of Ga and In dopants on the crystalline structure and the crystallinity of the ZnO thin films. Ga-doped ZnO thin films possess the highest crystallinity, while In and Ga dually doped-ZnO thin films were the worst. Through single and dual doping, the crystalline quality of the ZnO thin films can be controlled. Further researchs will be focused on the thermoelectric properties of the undoped ZnO and doped ZnO thin films.

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Issue: Vol 19 No 2 (2016)
Page No.: 84-91
Published: Jun 30, 2016
Section: Natural Sciences - Research article

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Copyright: The Authors. This is an open access article distributed under the terms of the Creative Commons Attribution License CC-BY 4.0., which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.

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Nguyen, N., Tran, V., & Phan, T. (2016). Investigation of the crystal structure and the morphology of In and Ga-doped ZnO thin films applied for thermoelectric materials. Science and Technology Development Journal, 19(2), 84-91.

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