Abstract

In this study, we have fabricated resistive switching memory device based on TiO2 thin films on ITO/PET commercial substrate. The study on the transmittance spectra showed that with the 100 nm-TiO2/ITO/PET device, the transmission is more than 80 % in the visible region and approximately of 85 % at wavelength of 550 nm. Ag/TiO2/ITO devices exhibit excellent stable bipolar resistive switching characteristics under electrical field bias of -2 V -> 2 V range on the flat state and even after reproductive physical stresses of 500 cycles. Our study on TiO2 based memristors suggests that resistive switching memories are suitable for flexible transparent application in the future.