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Abstract
In this study, we have fabricated resistive switching memory device based on TiO2 thin films on ITO/PET commercial substrate. The study on the transmittance spectra showed that with the 100 nm-TiO2/ITO/PET device, the transmission is more than 80 % in the visible region and approximately of 85 % at wavelength of 550 nm. Ag/TiO2/ITO devices exhibit excellent stable bipolar resistive switching characteristics under electrical field bias of -2 V -> 2 V range on the flat state and even after reproductive physical stresses of 500 cycles. Our study on TiO2 based memristors suggests that resistive switching memories are suitable for flexible transparent application in the future.
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Article Details
Issue: Vol 19 No 2 (2016)
Page No.: 12-18
Published: Jun 30, 2016
Section: Natural Sciences - Research article
DOI: https://doi.org/10.32508/stdj.v19i2.798
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Copyright: The Authors. This is an open access article distributed under the terms of the Creative Commons Attribution License CC-BY 4.0., which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
How to Cite
Pham, N., Le, H., Tran, V., & Dao, T. (2016). Fabricating and investigating properties of memristors on flexible substrate (PET). Science and Technology Development Journal, 19(2), 12-18. https://doi.org/https://doi.org/10.32508/stdj.v19i2.798
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