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Abstract
ZnO:In thin films was deposited on glass substrate by magnetron DC sputtering method from ceramic target. The ZnO:In ceramic targets have concentrations of In2O3 varying between 1 and 4wt%. The ZnO:In film has the resistivity with value of 1.79 x 10-3 Ωcm, at a layer thickness of about 1μm, corresponding with ZnO:In target (2%wt In2O3), at the substrate temperature of about 240- 0C. All ZnO:In thin films have the transparence above 85% in the visible spectra.
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Article Details
Issue: Vol 14 No 1 (2011)
Page No.: 72-77
Published: Mar 30, 2011
Section: Natural Sciences - Research article
DOI: https://doi.org/10.32508/stdj.v14i1.1886
How to Cite
Ho, B., Le, H., Le, Q., Pham, T., Duong, P., & Le, H. (2011). TRANSPARENT CONDUCTING ZnO:In THIN FILMS PREPARED BY MAGNETRON DC SPUTTERING METHOD. Science and Technology Development Journal, 14(1), 72-77. https://doi.org/https://doi.org/10.32508/stdj.v14i1.1886
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