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Abstract
ZnO:In thin films was deposited on glass substrate by magnetron DC sputtering method from ceramic target. The ZnO:In ceramic targets have concentrations of In2O3 varying between 1 and 4wt%. The ZnO:In film has the resistivity with value of 1.79 x 10-3 Ωcm, at a layer thickness of about 1μm, corresponding with ZnO:In target (2%wt In2O3), at the substrate temperature of about 240- 0C. All ZnO:In thin films have the transparence above 85% in the visible spectra.
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Article Details
Issue: Vol 14 No 1 (2011)
Page No.: 72-77
Published: Mar 30, 2011
Section: Natural Sciences - Research article
DOI: https://doi.org/10.32508/stdj.v14i1.1886
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Copyright: The Authors. This is an open access article distributed under the terms of the Creative Commons Attribution License CC-BY 4.0., which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
How to Cite
Ho, B., Le, H., Le, Q., Pham, T., Duong, P., & Le, H. (2011). TRANSPARENT CONDUCTING ZnO:In THIN FILMS PREPARED BY MAGNETRON DC SPUTTERING METHOD. VNUHCM Journal of Science and Technology Development, 14(1), 72-77. https://doi.org/https://doi.org/10.32508/stdj.v14i1.1886
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