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STUDY OF ALUMINIUM OXIDE THIN FILM PREPARED BY RF MAGNETRON SPUTTERING

Phuc Van Giang 1, *
Hung Vu Tuan Le 2
Hoa Thi Kim Ngo 2
Hieu Van Le 2
Dat Thanh Huynh 3
  1. An Giang University
  2. University of Natural Sciences, VNU-HCM
  3. VNU-HCM
Correspondence to: Phuc Van Giang, An Giang University. Email: pvphuc@hcmuns.edu.vn.
Volume & Issue: Vol. 12 No. 3 (2009) | Page No.: 5-15 | DOI: 10.32508/stdj.v12i3.2214
Published: 2009-02-15

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Copyright The Author(s) 2023. This article is published with open access by Vietnam National University, Ho Chi Minh city, Vietnam. This article is distributed under the terms of the Creative Commons Attribution License (CC-BY 4.0) which permits any use, distribution, and reproduction in any medium, provided the original author(s) and the source are credited. 

Abstract

Al2O3 is used widely for their properties of high dielectric, anti- erosion and anti- atomic oxygen effects. This compound was investigated by scientists in various methods. At the first time, the High Technology Laboratory of the Natural Sciences University in Ho Chi Minh city fabricated Al2O3 thin film by rf sputtering method. Optical properties of the film were investigated by UV-VIS spectroscopy. Its composition were determined by IR transmittance and reflectance absorption (ATR) spectroscopy methods. The structures of thin film were determined by X-ray diffraction (XRD) and AFM spectroscopies. Furthermore, the phase changes by annealing was investigated by IR transmittance absorption spectroscopy and XRD spectra.

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