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Abstract
Al2O3 is used widely for their properties of high dielectric, anti- erosion and anti- atomic oxygen effects. This compound was investigated by scientists in various methods. At the first time, the High Technology Laboratory of the Natural Sciences University in Ho Chi Minh city fabricated Al2O3 thin film by rf sputtering method. Optical properties of the film were investigated by UV-VIS spectroscopy. Its composition were determined by IR transmittance and reflectance absorption (ATR) spectroscopy methods. The structures of thin film were determined by X-ray diffraction (XRD) and AFM spectroscopies. Furthermore, the phase changes by annealing was investigated by IR transmittance absorption spectroscopy and XRD spectra.
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Article Details
Issue: Vol 12 No 3 (2009)
Page No.: 5-15
Published: Feb 15, 2009
Section: Article
DOI: https://doi.org/10.32508/stdj.v12i3.2214
Copyright Info
Copyright: The Authors. This is an open access article distributed under the terms of the Creative Commons Attribution License CC-BY 4.0., which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
How to Cite
Giang, P., Le, H., Ngo, H., Le, H., & Huynh, D. (2009). STUDY OF ALUMINIUM OXIDE THIN FILM PREPARED BY RF MAGNETRON SPUTTERING. Science and Technology Development Journal, 12(3), 5-15. https://doi.org/https://doi.org/10.32508/stdj.v12i3.2214
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