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Abstract
Transparent conducting Gallium-doped Zinc oxide thin films were prepared by rf magnetron sputtering using ceramic oxide target made from the mixture of Ga2O3 (99.99%) – ZnO (99.5%) powders pressed at 1400kg/cm2 and sintered at 1500 ℃. The obtained thin films have the optical transmission of 85% on average in the wavelength range of 400 to 700 nm and the resistivity of 4 -5 x 10-4 Ω.cm. The films have a high texture and grow only along the c axis (002 plane) of the hexagonal structure.
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Article Details
Issue: Vol 8 No 3 (2005)
Page No.: 5-10
Published: Mar 31, 2005
Section: Article
DOI: https://doi.org/10.32508/stdj.v8i3.2975
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Copyright: The Authors. This is an open access article distributed under the terms of the Creative Commons Attribution License CC-BY 4.0., which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
How to Cite
Vinh, T., Huu Chi, N., Van Den, N., My Dung, C., & Quang Long, D. (2005). FORMING Ga - DOPED ZNO BY RF MAGNETRON SPUTTERING. Science and Technology Development Journal, 8(3), 5-10. https://doi.org/https://doi.org/10.32508/stdj.v8i3.2975
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