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DEPOSITION OF ITO THIN FILM ON GLASS WITH ZnO BUFFER

Tran Cao Vinh 1
Nguyen Huu Chi 1
Cao Thi My Dung 1
Dinh Thi Mong Cam 1
Volume & Issue: Vol. 8 No. 4 (2005) | Page No.: 21-27 | DOI: 10.32508/stdj.v8i4.2981
Published: 2005-04-30

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This article is published with open access by Viet Nam National University, Ho Chi Minh City, Viet Nam. This article is distributed under the terms of the Creative Commons Attribution License (CC-BY 4.0) which permits any use, distribution, and reproduction in any medium, provided the original author(s) and the source are credited.

Abstract

ITO thin films are deposited on glasses with ZnO buffer layers by magnetron sputtering. The crystalline orientation and quality of the ITO films depend muinly on the texture of ZnO buffers. ITO/ZnO/glass systems have a good crystal structure and well oriented along <111> direction, normal to substrate surface. The lowest resistivity of these films is 1.6 x 10-4 Ωcm deposited at substrate temparature of 350oC with the average transmittance of 85% (0.4 – 0.7 um) and reflectance of above 85% in the wavelength runge of more than 2 um.

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