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VNUHCM Journal of

Science and Technology Development

An official journal of Viet Nam National University Ho Chi Minh City, Viet Nam since 1997

ISSN: 1859-0128
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Resistance switching behavior of ZnO thin films for random access memory applications

Trung Do Nguyen 1, *
Van Thuy Dao 2
Kim Ngoc Pham 1
Thi Kieu Hanh Ta 1
Tran Le 1
Tuan Tran 1
Van Hieu Le 1
Jaichan Lee 3
Mau Chien Dang 4
Bach Thang Phan 1

  1. University of Science, VNU-HCM
  2. TrungVuongHigh SchoolTp. HCM
  3. Sungkyunkwan University, South Korea
  4. Laboratory for Nanotechnology, VNU-HCM
Correspondence to: Trung Do Nguyen, University of Science, VNU-HCM. Email: pvphuc@vnuhcm.edu.vn.
Volume & Issue: Vol. 16 No. 1 (2013) | Page No.: 81-85 | DOI: 10.32508/stdj.v16i1.1422
Published: 2013-03-31

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Copyright © 2013 by the author(s).

Copyright The Author(s) 2023. This article is published with open access by Vietnam National University, Ho Chi Minh city, Vietnam. This article is distributed under the terms of the Creative Commons Attribution License (CC-BY 4.0) which permits any use, distribution, and reproduction in any medium, provided the original author(s) and the source are credited. 

Abstract

We investigated resistance switching behavior of the Ag/ZnO/Ti structures for random access memory devices. These films were prepared on glass substrate by dc sputtering technique at room temperature. The resistance switching follows unipolar switching mode with small switching voltages (0.4 V – 0.6 V). Our results figured out that the Ag/ZnO/Ti/Glass structure is a candidate structure for nonvolatile data storage applications.

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