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Abstract
We investigated resistance switching behavior of the Ag/ZnO/Ti structures for random access memory devices. These films were prepared on glass substrate by dc sputtering technique at room temperature. The resistance switching follows unipolar switching mode with small switching voltages (0.4 V – 0.6 V). Our results figured out that the Ag/ZnO/Ti/Glass structure is a candidate structure for nonvolatile data storage applications.
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Article Details
Issue: Vol 16 No 1 (2013)
Page No.: 81-85
Published: Mar 31, 2013
Section: Engineering and Technology - Research article
DOI: https://doi.org/10.32508/stdj.v16i1.1422
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Copyright: The Authors. This is an open access article distributed under the terms of the Creative Commons Attribution License CC-BY 4.0., which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
How to Cite
Nguyen, T., Dao, V. T., Pham, K. N., Ta, T. K. H., Le, T., Tran, T., Le, V. H., Lee, J., Dang, M. C., & Phan, B. T. (2013). Resistance switching behavior of ZnO thin films for random access memory applications. Science and Technology Development Journal, 16(1), 81-85. https://doi.org/https://doi.org/10.32508/stdj.v16i1.1422
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